Year: 2010
Type: article
Abstract: The large thermoelectric power of SiGeAu thin film depends on the sizes of microcrystals and the crystalline fraction of thin films. We investigate the crystallization process and control method of the microcrystal size and crystalline fraction. In the samples with 7 and 12 at. % Au, the crystallite diameter of Si1-x Ge x was constant when the annealing temperature was between 573–773 K and increased with 873 K annealing. These results suggest that there are two crystallization processes depending on annealing temperature: metal-induced crystallization (573–773 K) and liquid phase crystallization (873 K). The crystallite diameter increased with increasing Au composition and crystalline fraction increased with increasing annealing temperature. These new findings provide a strong hint to the control of the sizes of microcrystals and the crystalline fraction of thin films.
Institution: National Defense Academy of Japan
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W1967914595