Work

Experimental Demonstration of Continuous Electronic Structure Tuning via Strain in Atomically Thin MoS 2

Year: 2013

Type: article

Abstract: We demonstrate the continuous tuning of the electronic structure of atomically thin MoS2 on flexible substrates by applying a uniaxial tensile strain. A redshift at a rate of ~70 meV per percent applied strain for direct gap transitions, and at a rate 1.6 times larger for indirect gap transitions, has been determined by absorption and photoluminescence spectroscopy. Our result, in excellent agreement with first principles calculations, demonstrates the potential of two-dimensional crystals for applications in flexible electronics and optoelectronics.

Source: Nano Letters

DOI: 10.1021/nl4013166

Authors: Keliang He, Charles Poole, Kin Fai Mak, Jie Shan

Institutions: Case Western Reserve University, Cornell University

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: green

Funders: National Science Foundation, Case Western Reserve University, Division of Materials Research

Awards: Carrier Dynamics and Charge Transport in Novel Electronic Materials, CAREER: Probing Charge Transport by Terahertz Time-Domain Spectroscopy