Plasma etching of Si and SiO2—The effect of oxygen additions to CF4 plasmas
Year: 1978
Type: article
Source: Journal of Applied Physics
DOI: 10.1063/1.325382
Authors: C. J. Mogab, A. C. Adams, D. L. Flamm
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1968590512