Work

Tin DisulfideAn Emerging Layered Metal Dichalcogenide Semiconductor: Materials Properties and Device Characteristics

Year: 2014

Type: article

Source: ACS Nano

DOI: 10.1021/nn504481r

Authors: Yuan Huang, Eli Sutter, Jerzy T. Sadowski, Mircea Cotlet, Oliver L.A. Monti, David A. Racke, Mahesh R. Neupane, Darshana Wickramaratne, Roger K. Lake, Bruce A. Parkinson, Peter Sutter

Institutions: Brookhaven National Laboratory, Center for Functional Nanomaterials, University of Arizona, University of California, Riverside, University of California System, University of Wyoming

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Science Foundation, Division of Chemistry

Awards: Coupled Charge and Spin Transport in Topological Insulators, NEB: Charge-Density-Wave Computational Fabric: New State Variables and Alternative Material Implementation, G7076469132

OpenAlex ID: W1968846510

FWCI: 13.22

Cites: 71

Cited by: 558

Related to: 10

Parts: 1