Work

Level degeneracy and temperature-dependent carrier distributions in self-organized quantum dots

Year: 2003

Type: article

Abstract: Using femtosecond three-pulse pump–probe spectroscopy, we investigated the transparency condition for the ground and first excited states in self-organized In0.4Ga0.6As quantum dots at different temperatures and wavelengths. The temperature-dependent behavior of the transparency condition is consistent with calculations using a multilevel model with a large density of states in the quantum-well reservoir. The twofold spatial degeneracy of the first excited state and the temperature dependence of the thermal equilibrium processes were experimentally observed.

Source: Applied Physics Letters

DOI: 10.1063/1.1563732

Authors: K. Kim, T. B. Norris, S. Ghosh, J. Singh, P. Bhattacharya

Institution: University of Michigan

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: bronze