Work

Improvement of Resistive Switching Properties in $ \hbox{ZrO}_{2}$-Based ReRAM With Implanted Ti Ions

Year: 2009

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2009.2032566

Authors: Qi Liu, Shibing Long, Wei Wang, Qingyun Zuo, Sen Zhang, Junning Chen, Ming Liu

Institutions: Anhui University, Chinese Academy of Sciences, Institute of Microelectronics, State University of New York, University at Albany, State University of New York

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1969466968

FWCI: 9.858

Cites: 16

Cited by: 216

Related to: 9