Work

Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon

Year: 1999

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.124036

Authors: G. D. Wilk, R. M. Wallace

Institution: Texas Instruments (United States)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1970200102

FWCI: 48.12

Cites: 15

Cited by: 507

Related to: 10