Work

Utilization of SiC MOSFET Body Diode in Hard Switching Applications

Year: 2014

Type: article

Abstract: This work discusses the possibility of using SiC MOSFET body diode in switching power conversion applications, focusing on performance and reliability aspects.

Source: Materials science forum

DOI: 10.4028/www.scientific.net/msf.778-780.947

Authors: Alexander Bolotnikov, John Glaser, Jeff Nasadoski, Peter Losee, Steven Klopman, Alfred Permuy, Ljubisa Stevanovic

Institution: General Electric (United States)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

OpenAlex ID: W1970492692

FWCI: 0.69

Cites: 5

Cited by: 18

Related to: 10