Work

Cathodoluminescence study of micro-crack-induced stress relief for AlN films on Si(111)

Year: 2006

Type: article

Source: Journal of Electronic Materials

DOI: 10.1007/s11664-006-0328-1

Authors: G. Sarusi, O. Moshe, S. Khatsevich, D. H. Rich, J. Salzman, B. Meyler, M. Shandalov, Y. Golan

Institutions: Ben-Gurion University of the Negev, Technion – Israel Institute of Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1971428544

FWCI: 0.607

Cites: 27

Cited by: 10

Related to: 10