Year: 2007
Type: article
Abstract: Tellurium-containing cationic clathrates Si 46- x P x Te 8 ( x = 11–17) were synthesized using powder metallurgy. This study crystallized the P m 3 n (No. 223) structure and showed a p -type conductivity; their band gap energy is estimated to be 1.24 eV. Although the Si 46- x P x Te 8 samples with x = 16 and 17 were intrinsic, the samples with x = 11–15 were degenerated semiconductors; their electrical conductivity σ increased and their Seebeck coefficient S almost decreased with decreasing x . A power factor S 2 σ of 12 µW cm -1 K -2 at 1000 K and a dimensionless figure of merit ZT of 0.45 at 900 K were achieved for a p -type silicon clathrate Si 33 P 13 Te 8 .
DOI: 10.1143/jjap.46.l746
Institutions: Yamaguchi University, The Open University of Japan
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W1971800618