Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
Year: 2000
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.126940
Institution: University of California, Santa Barbara
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1971958003