Year: 2008
Type: article
Abstract: The authors reported on the experimental investigation of the high-temperature electrical resistance of graphene. The test structures were fabricated by using the focused ion beam from the single and bilayer graphene produced by mechanical exfoliation. It was found that as temperature increases from 300to500K, the resistance of the single, and bilayer graphene interconnects drops down by 30% and 70%, respectively. The quenching and temperature dependence of the resistance were explained by the thermal generation of the electron-hole pairs and carrier scattering by acoustic phonons. The obtained results are important for the proposed graphene interconnect applications in integrated circuits.
Source: Applied Physics Letters
DOI: 10.1063/1.2927371
Authors: Q. Shao, G. Liu, D. Teweldebrhan, A. A. Balandin
Institution: University of California, Riverside
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W1971985289