Work

Mott Relation for Anomalous Hall and Nernst Effects in Ga1−xMnxAs Ferromagnetic Semiconductors

Year: 2008

Type: article

Abstract: The Mott relation between the electrical and thermoelectric transport coefficients normally holds for phenomena involving scattering. However, the anomalous Hall effect (AHE) in ferromagnets may arise from intrinsic spin-orbit interaction. In this work, we have simultaneously measured AHE and the anomalous Nernst effect (ANE) in Ga1-xMnxAs ferromagnetic semiconductor films, and observed an exceptionally large ANE at zero magnetic field. We further show that AHE and ANE share a common origin and demonstrate the validity of the Mott relation for the anomalous transport phenomena.

Source: Physical Review Letters

DOI: 10.1103/physrevlett.101.117208

Authors: Yong Pu, Daichi Chiba, Fumihiro Matsukura, Hideo Ohno, Jing Shi

Institutions: University of California, Riverside, Tohoku University, Japan Science and Technology Agency, Research Institute of Electrical Communication, Tohoku University

Language: English

Topic: Magnetic properties of thin films

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W1972630207

FWCI: 4.505

Cites: 20

Cited by: 276

Related to: 10