Year: 2015
Type: article
Abstract: Bi(2−x)GaxTe2.7Se0.3 (x=0, 0.04, 0.08, 0.12) alloys were fabricated by vacuum melting and hot pressing technique. The structure of the samples was evaluated by means of X-ray diffraction. The peak shift toward higher angle can be observed by Ga-doping. The effects of Ga substitution for Bi on the electrical and thermal transport properties were investigated in the temperature range of 300–500 K. The power factor values of the Ga-doped samples are obviously improved in the temperature range of 300–440 K. Among all the samples, the Bi(2−x)GaxTe2.7Se0.3 (x=0.04) sample showed the lowest thermal conductivity near room temperature and the maximum ZT value reached 0.82 at 400 K.
Institution: Jiujiang University
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $2,790
OpenAlex ID: W1972895333