The integration of high-k dielectric on two-dimensional crystals by atomic layer deposition
Year: 2012
Type: article
Abstract: We investigate the integration of Al2O3 high-k dielectric on two-dimensional (2D) crystals of boron nitride (BN) and molybdenum disulfide (MoS2) by atomic layer deposition (ALD). We demonstrate the feasibility of direct ALD growth with trimethylaluminum and water as precursors on both 2D crystals. Through theoretical and experimental studies, we found that the initial ALD cycles play the critical role, during which physical adsorption dominates precursor adsorption at the crystal surface. We model the initial ALD growth stages at the 2D surface by analyzing Lennard-Jones potentials, which could guide future optimization of the ALD process on 2D crystals.
Source: Applied Physics Letters
DOI: 10.1063/1.3703595
Authors: Han Liu, Kun Xu, Xujie Zhang, Peide D. Ye
Institution: Purdue University West Lafayette
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W1972958016