Work

Defects in strained In0.2Ga0.8As/GaAs multiple quantum wells on patterned and unpatterned substrates: A near-infrared cathodoluminescence study

Year: 1992

Type: article

Source: Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

DOI: 10.1116/1.586167

Authors: D. H. Rich, K. C. Rajkumar, Li Chen, A. Madhukar, T. George, J. Maserjian, F. J. Grunthaner, A. Larsson

Institutions: University of Southern California, California Institute of Technology, Jet Propulsion Laboratory, Chalmers University of Technology

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Aeronautics and Space Administration, Defense Advanced Research Projects Agency, Air Force Office of Scientific Research

OpenAlex ID: W1973084971

FWCI: 0.691

Cites:

Cited by: 4

Related to: 10