Year: 2004
Type: article
Abstract: We report on fabrication of field-effect transistors (FETs) based on transition metal dichalcogenides. The unique structure of single crystals of these layered inorganic semiconductors enables fabrication of FETs with intrinsically low field-effect threshold and high charge carrier mobility, comparable to that in the best single-crystal Si FETs (up to 500 cm2/V s for the p-type conductivity in the WSe2-based FETs at room temperature). These FETs demonstrate ambipolar operation. Owing to mechanical flexibility, they hold potential for applications in “flexible” electronics.
Source: Applied Physics Letters
DOI: 10.1063/1.1723695
Institution: Rutgers, The State University of New Jersey
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W1973667087