Year: 2003
Type: article
Abstract: We describe a technique for connecting a nanometer-scale gold grain to leads by atomic-scale gold point contacts. These devices differ from previous metallic quantum dots in that the conducting channels are relatively well transmitting. We investigate the dependence of the Coulomb blockade on contact resistance. The high-resistance devices display Coulomb blockade and the low-resistance devices display a zero-bias conductance dip, both in quantitative agreement with theory. We find that in the intermediate regime, where the sample resistance is close to h/e2, the I–V curve displays a Coulomb staircase with symmetric contact capacitances.
Source: Journal of Applied Physics
DOI: 10.1063/1.1554756
Authors: A. Anaya, A. L. Korotkov, M. Bowman, J. Waddell, D. Davidovic
Institution: Georgia Institute of Technology
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W1973678080