Year: 2008
Type: article
Abstract: The application of graphene in nanoscale electronic devices requires the deliberate control of the density and character of its charge carriers. We show by angle-resolved photoemission spectroscopy that substantial hole doping in the conical band structure of epitaxial graphene monolayers can be achieved by the adsorption of bismuth, antimony, or gold. In the case of gold doping the Dirac point is shifted into the unoccupied states. Atomic doping presents excellent perspectives for large scale production.
Source: Nano Letters
DOI: 10.1021/nl802996s
Authors: Isabella Gierz, Christian Riedl, Ulrich Starke, Christian R. Ast, Klaus Kern
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W1973831608