Work

Intersubband scattering effect on the mobility of a Si (100) inversion layer at low temperatures

Year: 1979

Type: article

Source: Physical review. B, Condensed matter

DOI: 10.1103/physrevb.19.6433

Authors: S. Mori, T. Ando

Institutions: The University of Tokyo, IBM Research - Thomas J. Watson Research Center

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1973915735

FWCI: 6.892

Cites: 24

Cited by: 167

Related to: 10