Work

Substrates for gallium nitride epitaxy

Year: 2002

Type: article

Source: Materials Science and Engineering R Reports

DOI: 10.1016/s0927-796x(02)00008-6

Authors: L. Liu, J.H. Edgar

Institution: Kansas State University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1974072513

FWCI: 16.13

Cites: 413

Cited by: 862

Related to: 10