Year: 2009
Type: article
Abstract: Electrically generated spin polarization is probed directly in bulk GaN using Kerr rotation spectroscopy. A series of n-type GaN epilayers are grown in the wurtzite phase both by molecular beam epitaxy and metalorganic chemical vapor deposition with a variety of doping densities chosen to broadly modulate the transverse spin lifetime, T2∗. The spin polarization is characterized as a function of electrical excitation energy over a range of temperatures. Despite weak spin-orbit interactions in GaN, a current-induced spin polarization is observed in the material at temperatures of up to 200 K.
Source: Applied Physics Letters
DOI: 10.1063/1.3194781
Authors: W. F. Koehl, M. H. Wong, C. Poblenz, B. Swenson, U. K. Mishra, J. S. Speck, D. D. Awschalom
Institution: University of California, Santa Barbara
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W1974555425