Trap-enhanced electric fields in semi-insulators: The role of electrical and optical carrier injection
Year: 1991
Type: article
Abstract: We report extremely large field enhancement near the anode of an electrically biased metal/semi-insulator/metal structure. The large anode field results from a trap-enhanced space-charge region and is large enough to cause injection of holes at the anode. Our numerical simulations confirm this interpretation and show that for typical semi-insulating GaAs, large trap-enhanced fields (TEF) are to be expected. The TEF effect, contrary to that observed in doped materials, is enhanced by optical injection of carriers near the anode, and can be exploited for the efficient generation of ultrafast THz radiation.
Source: Applied Physics Letters
DOI: 10.1063/1.106153
Authors: Stephen E. Ralph, D. Grischkowsky
Institution: IBM Research - Thomas J. Watson Research Center
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W1974714817