TEM and LTPL Investigations of 3C-SiC Layers Grown by LPE on (100) and (111) 3C-SiC Seeds
Year: 2010
Type: article
Abstract: In the present work the defects appearing in layers grown by liquid phase epitaxy on different substrates are compared. The used seeds were (i) 3C-SiC with (111) orientation, grown heteroepitaxially on (0001) 4H-SiC or 6H-SiC substrates by continuous feed physical vapour transport process and the vapour-liquid-solid mechanism, respectively, and (ii) 3C-SiC wafer with (100) orientation from HOYA. The structural and optical investigation showed that (i) on the (111) substrates, due to the appearance of silicon and 6H-SiC inclusions, a layer which consisted of a sequence of long period polytypes was formed. The dominant polytype formed was 21R-SiC, which after successive transformation to 39R- and 57R- SiC led to the formation of 6H-SiC on the top of the layer. (ii) On the (100) substrates, a 3C-SiC layer with comparatively uniform defect density was formed. The main defects were stacking faults and their density was reducing during the process.
Source: Materials science forum
Institutions: Aristotle University of Thessaloniki, Centre National de la Recherche Scientifique, Université Montpellier 2, National Institute of Advanced Industrial Science and Technology, Institut polytechnique de Grenoble, Micro and Nanotechnology Innovation Centre, Lyon 1 Université, Université de Montpellier, Université de Lyon
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
Funder: European Commission
OpenAlex ID: W1975703256