Impact of nanowire variability on performance and reliability of gate-all-around III-V MOSFETs
Year: 2013
Type: conference-paper
Authors: S. H. Shin, M. Masuduzzaman, J. J Gu, M. A. Wahab, N. Conrad, M. Si, P. D. Ye, M. A. Alam
Institution: Purdue University West Lafayette
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Funder: Harvard University
OpenAlex ID: W1975961289