Anode hole injection, defect generation, and breakdown in ultrathin silicon dioxide films
Year: 2001
Type: article
Source: Journal of Applied Physics
DOI: 10.1063/1.1363680
Authors: D. J. DiMaria, J. H. Stathis
Institution: IBM Research - Thomas J. Watson Research Center
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1976290199