Work

A Light-Activated SiC Darlington Transistor Using SiCGe as Base Layer

Year: 2003

Type: article

Source: Chinese Physics Letters

DOI: 10.1088/0256-307x/20/3/334

Authors: Chen Zhi-Ming, Pu Hong-Bin, Fred R Beyette

Institutions: Xi'an University of Technology, University of Cincinnati

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1976519178

FWCI: 1.673

Cites: 4

Cited by: 11

Related to: 10