Work

A TEM study of in-grown stacking faults in 3C-SiC layers grown by CF-PVT on 4H-SiC substrates

Year: 2009

Type: article

Source: Physica B Condensed Matter

DOI: 10.1016/j.physb.2009.08.190

Authors: Maya Marinova, Frederic Mercier, Alkioni Mantzari, Irina Galben, Didier Chaussende, Efstathios K. Polychroniadis

Institutions: Aristotle University of Thessaloniki, Institut polytechnique de Grenoble, Centre National de la Recherche Scientifique, Laboratoire des Matériaux et du Génie Physique

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: European Commission

OpenAlex ID: W1976541699

FWCI: 1.058

Cites: 8

Cited by: 14

Related to: 10