Work

Anomalous Large Thermoelectric Power on Heavily B-Doped SiGe Thin Films with Thermal Annealing

Year: 2002

Type: article

Abstract: The thermoelectric properties of heavily B-doped SiGe thin films were studied. The electrical resistivity in the high-temperature region was very low, which suggests the possibility of high-temperature use of heavily doped SiGe films. After thermal annealing, the low-temperature deposited samples showed collapse of the superlattice structure. As deposited condition, the samples might be in amorphous like SiGe thin films apart from good crystallinity. In these films, the anomalous large thermoelectric power was observed in the room temperature region. The power factor reached 4 × 10 0 W/mK 2 at 400 K and 1 × 10 0 W/mK 2 at 900 K.

Source: Japanese Journal of Applied Physics

DOI: 10.1143/jjap.41.l949

Authors: Toshio Kawahara, Sang Min Lee, Yoichi Okamoto, Jun Morimoto, Kimihiro Sasaki, Tomonobu Hata

Institutions: National Defense Academy of Japan, Kanazawa University

Language: English

Topic: Advanced Thermoelectric Materials and Devices

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: bronze

OpenAlex ID: W1976652961

FWCI: 0.65

Cites:

Cited by: 13

Related to: 10