GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching
Year: 2008
Type: article
Abstract: A novel method for fabricating trench structures on GaN was developed. A smooth non-polar (1100) plane was obtained by wet etching using tetramethylammonium hydroxide (TMAH) as the etchant. A U-shape trench with the (1100) plane side walls was formed with dry etching and the TMAH wet etching. A U-shape trench gate metal oxide semiconductor field-effect transistor (MOSFET) was also fabricated using the novel etching technology. This device has the excellent normally-off operation of drain current–gate voltage characteristics with the threshold voltage of 10 V. The drain breakdown voltage of 180 V was obtained. The results indicate that the trench gate structure can be applied to GaN-based transistors.
Source: Applied Physics Express
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W1976769231