Work

J-band performance of 300 nm gate length GaAs FETs

Year: 1978

Type: conference-paper

Source: Technical digest - International Electron Devices Meeting/Technical digest

DOI: 10.1109/iedm.1978.189371

Authors: R.S. Butlin, A.J. Hughes, R.H. Bennett, D. Parker, J.A. Turner

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1977758720

FWCI: 1.749

Cites:

Cited by: 4

Related to: 10