Work

On the stochastic nature of resistive switching in metal oxide RRAM: Physical modeling, monte carlo simulation, and experimental characterization

Year: 2011

Type: conference-paper

Source: Technical digest - International Electron Devices Meeting/Technical digest

DOI: 10.1109/iedm.2011.6131572

Authors: Shimeng Yu, Ximeng Guan, H.-S. Philip Wong

Institutions: Stanford SystemX Alliance, Stanford University

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Science Foundation, Defense Advanced Research Projects Agency

OpenAlex ID: W1977765713

FWCI: 15.28

Cites: 9

Cited by: 216

Related to: 10