Work

Growth and design of deep-UV (240–290nm) light emitting diodes using AlGaN alloys

Year: 2004

Type: article

Source: Journal of Crystal Growth

DOI: 10.1016/j.jcrysgro.2004.08.035

Authors: A.A. Allerman, M.H. Crawford, A.J. Fischer, K.H.A. Bogart, S.R. Lee, D.M. Follstaedt, P.P. Provencio, D.D. Koleske

Institution: Sandia National Laboratories

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: U.S. Department of Energy, Defense Advanced Research Projects Agency, National Nuclear Security Administration, Sandia National Laboratories

OpenAlex ID: W1978025846

FWCI: 9.629

Cites: 22

Cited by: 153

Related to: 10