Work

Scanned photoluminescence with high spatial resolution in semi-insulating GaAs and InP:aspects of surface passivation and photodegradation

Year: 1992

Type: article

Source: Semiconductor Science and Technology

DOI: 10.1088/0268-1242/7/1a/010

Author: G E Carver

Institution: AT&T (United States)

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1978104131

FWCI: 0.921

Cites: 22

Cited by: 14

Related to: 10