Work

Effect of disorder on a graphene p−n junction

Year: 2008

Type: article

Abstract: We propose the theory of transport in a gate-tunable graphene $p\text{\ensuremath{-}}n$ junction, in which the gradient of the carrier density is controlled by the gate voltage. Depending on this gradient and on the density of charged impurities, the junction resistance is dominated by either diffusive or ballistic contribution. We find the conditions for observing ballistic transport and show that in existing devices they are satisfied only marginally. We also simulate numerically the trajectories of charge carriers and illustrate challenges in realizing more delicate ballistic effects, such as Veselago lensing.

Source: Physical Review B

DOI: 10.1103/physrevb.77.075420

Authors: M. M. Fogler, D. S. Novikov, L. I. Glazman, B. I. Shklovskii

Institutions: University of California San Diego, University of Minnesota, Yale University

Language: Latvian

Topic: Graphene research and applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: bronze

Funders: National Science Foundation, Division of Materials Research

Awards: Cooperative Effects Of Impurities On Electron Transport In Low-Dimensional Nanostructures, Quantum Fluctuations of the Order Parameter in Superconductors, Correlated Electron Transport in Mesoscopic Structures