Year: 1985
Type: article
Abstract: This paper reports on the ion mixing of a carbon-silicon system induced by the Ar-ion bombardment of carbon layers deposited by an arc-discharge on single-crystalline silicon substrates. A study using infrared absorption spectroscopy has shown that a disordered carbon-silicon mixture can be obtained immediately after bombardment and that subsequent annealing causes the formation of a crystalline β-type silicon carbide phase at about 800°C. The formation temperature is lower by about 100°C than that for carbon-silicon mixed layers formed by the direct implantation of carbon ions into silicon substrates. Argon-ion bombardment, itself, is found to play an important role in a reduction of the formation temperature.
DOI: 10.1143/jjap.24.1712
Authors: Tadamasa Kimura, Yuki Tatebe, Akira Kawamura, Shigemi Yugo, Yoshio Adachi
Institution: University of Electro-Communications
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W1978732378