Work

Silicon Carbide: Defects and Devices

Year: 2005

Type: article

Source: Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena

DOI: 10.4028/www.scientific.net/ssp.108-109.663

Authors: Fabrizio Roccaforte, Salvatore Di Franco, Filippo Giannazzo, Francesco La Via, Sebania Libertino, Vito Raineri, Mario Saggio, Edoardo Zanetti

Institutions: National Research Council, Institute for Microelectronics and Microsystems

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1979440464

FWCI:

Cites: 26

Cited by: 6

Related to: 10