Work

Lateral and vertical isolation by arsenic implantation into MOCVD-grown GaAs layers

Year: 1993

Type: article

Source: Journal of Electronic Materials

DOI: 10.1007/bf02649987

Authors: Fereydoon Namavar, N. M. Kalkhoran, A. Claverie, Z. Liliental-Weber, E. R. Weber, P. A. Sekula-Moisé, S. Vernon, V. Haven

Institutions: Spire Corporation (United States), Centre National de la Recherche Scientifique, Centre d’Élaboration de Matériaux et d’Études Structurales, Lawrence Berkeley National Laboratory, University of California, Berkeley

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1979645349

FWCI: 1.472

Cites: 7

Cited by: 7

Related to: 10