A Phenomenological Model for the Reset Mechanism of Metal Oxide RRAM
Year: 2010
Type: article
Source: IEEE Electron Device Letters
Authors: Shimeng Yu, H.-S. Philip Wong
Institutions: Stanford SystemX Alliance, Stanford University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1980284740