Six-band k⋅p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness
Year: 2003
Type: article
Source: Journal of Applied Physics
DOI: 10.1063/1.1585120
Authors: M. V. Fischetti, Z. Ren, P. M. Solomon, M. Yang, K. Rim
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1980467913