The effects of impurity diffusion and surface damage on oxygen precipitation in silicon
Year: 1983
Type: article
Source: Journal of Applied Physics
DOI: 10.1063/1.331714
Author: R. B. Fair
Institution: MCNC Research and Development Institute
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1981185652