Work

TWO-DIMENSIONAL HOLES IN GaAs HIGFETs: FABRICATION METHODS AND TRANSPORT MEASUREMENTS

Year: 2007

Type: article

Source: International Journal of Modern Physics B

DOI: 10.1142/s0217979207042665

Authors: JIAN HUANG, D. S. NOVIKOV, D. C. TSUI, L. N. PFEIFFER, K. W. WEST

Institution: Princeton University

Language: English

Topic: Quantum and electron transport phenomena

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1981877288

FWCI: 0.203

Cites: 21

Cited by: 9

Related to: 10