Work

Polariton Laser Using Single Micropillar GaAs−GaAlAs Semiconductor Cavities

Year: 2008

Type: article

Abstract: Polariton lasing is demonstrated on the zero-dimensional states of single GaAs/GaAlAs micropillar cavities. Under nonresonant excitation, the measured polariton ground-state occupancy is found as large as 10(4). Changing the spatial excitation conditions, competition between several polariton lasing modes is observed, ruling out Bose-Einstein condensation. When the polariton state occupancy increases, the emission blueshift is the signature of self-interaction within the half-light half-matter polariton lasing mode.

Source: Physical Review Letters

DOI: 10.1103/physrevlett.100.047401

Authors: Daniele Bajoni, Pascale Senellart, Esther Wertz, Isabelle Sagnes, Audrey Miard, Aristide Lemaître, Jacqueline Bloch

Institution: Centre National de la Recherche Scientifique

Language: English

Topic: Strong Light-Matter Interactions

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W1982008213

FWCI: 17.59

Cites: 34

Cited by: 469

Related to: 10