Year: 1978
Type: article
Abstract: The conditions under which misfit dislocations are generated during phosphorus diffusion in silicon are discussed. Van der Merwe's concept of critical misfit is used to determine the critical surface region depth for a given P surface concentration which causes spontaneous misfit dislocation formation. Using this model the times required to form misfit arrays are calculated as a function of temperature and surface concentration. The effect of misfit dislocation generation in an oxidizing ambient is also discussed.
DOI: 10.1149/1.2131592
Author: Richard B. Fair
Institution: AT&T (United States)
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W1982159288