Work

Low-Leakage TiO$_{\bf 2}$ Nanowire Dielectric MOS Device Using Ag Schottky Gate Contact

Year: 2013

Type: article

Source: IEEE Transactions on Nanotechnology

DOI: 10.1109/tnano.2013.2277600

Authors: Jay Chandra Dhar, Aniruddha Mondal, Naorem Khelchand Singh, P. Chinnamuthu

Institutions: National Institute of Technology Agartala, National Institute for Materials Science

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1982724901

FWCI: 0.199

Cites: 7

Cited by: 10

Related to: 10