OpenAlex | Investigation of Ge and C layer deposition on a Si substrate using SIMS profiling

Investigation of Ge and C layer deposition on a Si substrate using SIMS profiling

Work

Year: 2010

Type: article

Source: Bulletin of the Russian Academy of Sciences Physics

Authors Vladimir S. Kharlamov, D. V. Kulikov, Yu. V. Trushin, P. Nader, P. Mazri +2 more

Institutions Russian Academy of Sciences, Ioffe Institute, Université de Montpellier, Technische Universität Ilmenau

Cites: 9

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Related to: 10

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Topic: Ion-surface interactions and analysis

Subfield: Computational Mechanics

Field: Engineering

Domain: Physical Sciences

Open Access status: closed