Work

Arsenic precipitates and the semi-insulating properties of GaAs buffer layers grown by low-temperature molecular beam epitaxy

Year: 1990

Type: article

Source: Applied Physics Letters

DOI: 10.1063/1.103474

Authors: A. C. Warren, J. M. Woodall, J. L. Freeouf, D. Grischkowsky, D. T. McInturff, M. R. Melloch, N. Otsuka

Institutions: IBM Research - Thomas J. Watson Research Center, Purdue University West Lafayette

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1982996553

FWCI: 41.18

Cites: 9

Cited by: 440

Related to: 10