Interaction between dislocations and He-implantation-induced voids in GaN epitaxial layers
Year: 2005
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.1940121
Authors: D. Alquier, C. Bongiorno, F. Roccaforte, V. Raineri
Institution: Institute for Microelectronics and Microsystems
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1983033558