Work

The gettering of boron by an ion-implanted antimony layer in silicon

Year: 1975

Type: article

Source: Solid-State Electronics

DOI: 10.1016/0038-1101(75)90179-3

Authors: Richard B. Fair, Paul N. Pappas

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W1984437901

FWCI: 0.336

Cites: 8

Cited by: 2

Related to: 10