Vertical AlGaAs/GaAs heterojunction bipolar transistors with 106 V breakdown
Year: 2001
Type: article
Source: Solid-State Electronics
Authors: A.G Baca, P.C Chang, J.F Klem, C.I.H Ashby, D.C Martin
Institution: Sandia National Laboratories
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1984542592